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| 2N5151 2N5153 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) HIGH SPEED MEDIUM VOLTAGE SWITCHES DESCRIPTION The 2N5151 and the 2N5153 are silicon expitaxial planar PNP transistors in jedec TO-39 metal case intended for use in switching applications. The complementary NPN types are the 2N5152 and 2N5154 respectively 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. 5.08 (0.200) typ. 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 45 TO-39 Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25c unless otherwise stated VCBO VCEO VEBO IC IC(PK) IB Ptot Collector - Base Voltage Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage (IC = 0) Continuous Collector Current Peak Collector Current Base Current Total Dissipation at Tamb = 25C Tcase = 50C Tcase = 100C Tstg Tj Semelab plc. Operating and Storage Temperature Range Junction temperature Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk 2N5151 -100V -80V -5.5V -5A -10A -2.5A 1W 10W 6.7W 2N5153 -65 to +200C 200C Prelim. 3/97 2N5151 2N5153 THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 15 175 C/W C/W ELECTRICAL CHARACTERISTICS FOR 2N5151 (Tcase = 25C unless otherwise stated) Parameter ICES ICEV ICEO IEBO Collector Cut Off Current Collector Cut Off Current Collector Cut Off Current Emitter Cut Off Current Test Conditions VCE = -60V VCE = -100V VCE = -60V VBE = 2V VCE = -40V VEB = -4V VEB = -5.5V IC = -100mA IC = -2.5A IC = -5A IC = -2.5A IC = -5A IC = -2.5A IC = -50mA IC = -2.5A IC = -5A Tcase = -55C IC =2.5A VCE = -5V VCB = -10V VCE = -5V VCE = -5v VCC = 30v VCC = 30V IB = 0 IC = 0 IC = 0 IB = 0 IB = -250mA IB = -500mA IB = -250mA IB = -500mA VCE = -5V VCE = -5V VCE = -5V VCE = -5v VBE = 0 VBE = 0 Tcase = 150C Min. Typ. Max. -1 -1 -500 -50 -1 -1 Unit A mA A A mA VCEO(SUS) Collector Emitter Saturation Voltage VCE(sat) VBE(sat) VBE hFE Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Base Emitter Voltage DC Current Gain 80 -0.75 -1.5 -1.45 -2.2 -1.45 20 30 20 15 250 20 3 0.5 1.3 s s pF 90 V CCBO hFE Collector Base Capacitance Small Signal Current Gain IE = 0 f = 1MHz IC = -0.1A f = 1KHz IC = -0.5A f = 20MHz IC = -5A IB1 = -0.5A IC = -5A IB1=-IB2 = 0.5A ton toff Turn On Time Turn Off Time * Pulse test tp = 300ms , d < 2% Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 3/97 2N5151 2N5153 ELECTRICAL CHARACTERISTICS FOR 2N5153 (Tcase = 25C unless otherwise stated) Parameter ICES ICEV ICEO IEBO Collector Cut Off Current Collector Cut Off Current Collector Cut Off Current Emitter Cut Off Current Test Conditions VCE = -60V VCE = -100V VCE = -60V VBE = 2V VCE = -40V VEB = -4V VEB = -5.5V IC = -100mA IC = -2.5A IC = -5A IC = -2.5A IC = -5A IC = -2.5A IC = -50mA IC = -2.5A IC = -5A Tcase = -55C IC =2.5A VCE = -5V VCB = -10V VCE = -5V VCE = -5v VCC = 30v VCC = 30V IB = 0 IC = 0 IC = 0 IB = 0 IB = -250mA IB = -500mA IB = -250mA IB = -500mA VCE = -5V VCE = -5V VCE = -5V VCE = -5v VBE = 0 VBE = 0 Tcase = 150C Min. Typ. Max. -1 -1 -500 -50 -1 -1 Unit A mA A A mA VCEO(SUS) Collector Emitter Saturation Voltage VCE(sat) VBE(sat) VBE hFE Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Base Emitter Voltage DC Current Gain 80 -0.75 -1.5 -1.45 -2.2 -1.45 50 70 40 35 250 50 3.5 0.5 1.3 s s pF 200 V CCBO hFE Collector Base Capacitance Small Signal Current Gain IE = 0 f = 1MHz IC = -0.1A f = 1KHz IC = -0.5A f = 20MHz IC = -5A IB1 = -0.5A IC = -5A IB1=-IB2 = 0.5A ton toff Turn On Time Turn Off Time * Pulse test tp = 300ms , d < 2% Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 3/97 |
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